PEMD9
Symbol Micros:
TPEMD9
Case : SOT666
NPN/PNP 100mA 50V 300mW 230/180MHz +res. 10k+47k PEMD9,115, PEMD9,315
Any questions? We will be happy to answer.
Write sales // micros.com.pl or call: +48 785 054 437
Write sales // micros.com.pl or call: +48 785 054 437
Parameters
| Power dissipation: | 300mW |
| Current gain factor: | 100 |
| Cutoff frequency: | 230MHz |
| Manufacturer: | NXP |
| Case: | SOT666 |
| Max. collector current: | 100mA |
| Max collector-emmiter voltage: | 50V |
| Power dissipation: | 300mW |
| Current gain factor: | 100 |
| Cutoff frequency: | 230MHz |
| Manufacturer: | NXP |
| Case: | SOT666 |
| Max. collector current: | 100mA |
| Max collector-emmiter voltage: | 50V |
| Operating temperature (range): | -65°C ~ 150°C |
| Transistor type: | NPN/PNP |
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