PSMN057-200B

Symbol Micros: TPSMN057-200b
Contractor Symbol:
Case : TO263 (D2PAK)
N-MOSFET 39A 200V 250W 0.057Ω
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Parameters
Open channel resistance: 165mOhm
Max. drain current: 39A
Max. power loss: 250W
Case: TO263 (D2PAK)
Manufacturer: NXP
Max. drain-source voltage: 200V
Max. drain-gate voltage: 200V
Manufacturer:: NXP Manufacturer part number: PSMN057-200B RoHS Case style: TO263t/r (D2PAK) Datasheet
In stock:
20 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 300+
Net price (EUR) 2,0229 1,6057 1,4510 1,3736 1,3478
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Packaging:
20
Manufacturer:: Nexperia Manufacturer part number: PSMN057-200B,118 Case style: TO263 (D2PAK)  
External warehouse:
800 pcs.
Quantity of pcs. 800+ (Inappropriate quantity? Ask for a different one).
Net price (EUR) 1,3478
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Packaging:
800
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Nexperia Manufacturer part number: PSMN057-200P,127 Case style: TO263 (D2PAK)  
External warehouse:
4200 pcs.
Quantity of pcs. 50+ (Inappropriate quantity? Ask for a different one).
Net price (EUR) 1,5226
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Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 165mOhm
Max. drain current: 39A
Max. power loss: 250W
Case: TO263 (D2PAK)
Manufacturer: NXP
Max. drain-source voltage: 200V
Max. drain-gate voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD