PSMN1R7-60BS NXP

Symbol Micros: TPSMN1r7-60bs

96154

TPSMN1r7-60bs

Contractor Symbol:

Case : D2PAK

Datasheet

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N-MOSFET 60V 120A 306W 2mΩ

Parameters

Open channel resistance:	4,5mOhm
Max. drain current:	120A
Max. power loss:	306W
Case:	D2PAK
Manufacturer:	NXP
Max. drain-source voltage:	60V
Max. drain-gate voltage:	60V

All parameters

Manufacturer:: NXP Manufacturer part number: PSMN1R7-60BS RoHS Case style: D2PAK t/r Datasheet

In stock:

4 pcs.

Quantity of pcs.	1+	4+	20+	100+	300+
Net price (EUR)	2,6042	2,0539	1,7765	1,6623	1,6273

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Packaging:
4 Quantity (multiple: 1)

- +

Manufacturer:: Nexperia Manufacturer part number: PSMN1R7-60BS,118 Case style: D2PAK  

External warehouse:

2400 pcs.

Quantity of pcs.	800+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,6273

Add to comparison tool Add inquiry (RFQ)

Packaging:
800

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: Nexperia Manufacturer part number: PSMN1R7-60BS,118 Case style: D2PAK  

External warehouse:

2800 pcs.

Quantity of pcs.	800+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,6273

Add to comparison tool Add inquiry (RFQ)

Packaging:
800

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: Nexperia Manufacturer part number: PSMN1R7-60BS,118 Case style: D2PAK  

External warehouse:

2400 pcs.

Quantity of pcs.	800+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,6273

Add to comparison tool Add inquiry (RFQ)

Packaging:
800

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	4,5mOhm
Max. drain current:	120A
Max. power loss:	306W
Case:	D2PAK
Manufacturer:	NXP
Max. drain-source voltage:	60V
Max. drain-gate voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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