PSMN3R7-100BSE NEXPERIA
Symbol Micros:
TPSMN3r7-100bse
Case : TO263 (D2PAK)
Transistor MOSFET, TN-channel 100 V, 3.95 mOhm, D2PAK
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Write sales // micros.com.pl or call: +48 785 054 437
Parameters
| Open channel resistance: | 10,7mOhm |
| Max. drain current: | 120A |
| Max. power loss: | 405W |
| Case: | TO263 (D2PAK) |
| Manufacturer: | NXP |
| Max. drain-source voltage: | 100V |
| Max. drain-gate voltage: | 100V |
| Open channel resistance: | 10,7mOhm |
| Max. drain current: | 120A |
| Max. power loss: | 405W |
| Case: | TO263 (D2PAK) |
| Manufacturer: | NXP |
| Max. drain-source voltage: | 100V |
| Max. drain-gate voltage: | 100V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 175°C |
| Mounting: | SMD |
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