R6011KNX Rohm Semiconductor

Symbol Micros: TR6011knx
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Case : TO220FP
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MOSFET N-CH 600V 11A TO220FM TO-220-3 Full Pack
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Parameters
Open channel resistance: 720mOhm
Max. drain current: 11A
Max. power loss: 53W
Case: TO220FP
Manufacturer: ROHM
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Manufacturer:: ROHM - Japan Manufacturer part number: R6011KNX RoHS Case style: TO220FP Datasheet
In stock:
10 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 100+
Net price (EUR) 2,1205 1,7254 1,4986 1,3887 1,3256
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Packaging:
10
Open channel resistance: 720mOhm
Max. drain current: 11A
Max. power loss: 53W
Case: TO220FP
Manufacturer: ROHM
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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