RFD3055LE

Symbol Micros: TRFD3055le

53274

TRFD3055le

Contractor Symbol:

Case : TO251 (IPACK)

Datasheet

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N-MOSFET 11A 60V 38W 107mOhm

Parameters

Open channel resistance:	107mOhm
Max. drain current:	11A
Max. power loss:	38W
Case:	TO251 (IPACK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Max. drain-gate voltage:	60V

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: RFD3055LE RoHS Case style: TO251 (IPACK)  

In stock:

300 pcs.

Quantity of pcs.	2+	10+	75+	300+	900+
Net price (EUR)	0,8979	0,5674	0,4334	0,4022	0,3903

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Packaging:
75/300 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	107mOhm
Max. drain current:	11A
Max. power loss:	38W
Case:	TO251 (IPACK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Max. drain-gate voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	16V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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