RQ3E180AJTB

Symbol Micros: TRQ3e180ajtb

247031

TRQ3e180ajtb

Contractor Symbol:

Case : SMT

Datasheet

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MOSFET N-CH 30V 18A HSMR8 8-PowerVDFN

Parameters

Open channel resistance:	5,8mOhm
Max. drain current:	30A
Max. power loss:	30W
Case:	SMT
Manufacturer:	ROHM
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ROHM - Japan Manufacturer part number: RQ3E180AJTB RoHS Case style: SMT Datasheet

In stock:

50 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,7174	0,4552	0,3599	0,3265	0,3122

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Packaging:
1500 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	5,8mOhm
Max. drain current:	30A
Max. power loss:	30W
Case:	SMT
Manufacturer:	ROHM
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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