RQ3E180AJTB

Symbol Micros: TRQ3e180ajtb
Contractor Symbol:
Case : SMT
MOSFET N-CH 30V 18A HSMR8 8-PowerVDFN
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Parameters
Open channel resistance: 5,8mOhm
Max. drain current: 30A
Max. power loss: 30W
Case: SMT
Manufacturer: ROHM
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Manufacturer:: ROHM - Japan Manufacturer part number: RQ3E180AJTB RoHS Case style: SMT Datasheet
In stock:
50 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,7033 0,4463 0,3528 0,3201 0,3061
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Packaging:
1500
Open channel resistance: 5,8mOhm
Max. drain current: 30A
Max. power loss: 30W
Case: SMT
Manufacturer: ROHM
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Max. gate-source Voltage: 12V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD