S8050 MDD(MICRODIODE)

Symbol Micros: TS8050 MDD

527525

TS8050 MDD

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor NPN; Bipolar; 400; 25V; 5V; 150MHz; 500mA; 300mW; -55°C~150°C; MOSLEADER S8050-ML; KST8050S;

Parameters

Power dissipation:	300mW
Current gain factor:	400
Cutoff frequency:	150MHz
Manufacturer:	MDD
Case:	SOT23
Max. collector current:	500mA
Max collector-emmiter voltage:	25V

All parameters

Manufacturer:: MDD(Microdiode Electronics) Manufacturer part number: S8050 RoHS Case style: SOT23t/r Datasheet

In stock:

3000 pcs.

Quantity of pcs.	20+	100+	500+	3000+	15000+
Net price (EUR)	0,0434	0,0162	0,0087	0,0065	0,0060

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Packaging:
3000 Quantity (multiple: 10)

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• Parameters

Power dissipation:	300mW
Current gain factor:	400
Cutoff frequency:	150MHz
Manufacturer:	MDD
Case:	SOT23
Max. collector current:	500mA
Max collector-emmiter voltage:	25V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	NPN

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