SCT3080ALGC11

Symbol Micros: TSCT3080algc11

231513

TSCT3080algc11

Contractor Symbol:

Case : TO247

Datasheet

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SiC-N-Ch 650V 30A 134W 0,104R TO247 SCT3080ALGC11 : Rohm

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Parameters

Open channel resistance:	104mOhm
Max. drain current:	30A
Max. power loss:	134W
Case:	TO247
Manufacturer:	ROHM
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ROHM - Japan Manufacturer part number: SCT3080ALGC11 RoHS Case style: TO247 Datasheet

In stock:

2 pcs.

Quantity of pcs.	1+	2+	4+	10+	20+
Net price (EUR)	12,4272	11,9358	11,5825	11,2619	11,0958

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Packaging:
2 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	104mOhm
Max. drain current:	30A
Max. power loss:	134W
Case:	TO247
Manufacturer:	ROHM
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	22V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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