SCT3080ALGC11

Symbol Micros: TSCT3080algc11
Contractor Symbol:
Case : TO247
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SiC-N-Ch 650V 30A 134W 0,104R TO247 SCT3080ALGC11 : Rohm
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Parameters
Open channel resistance: 104mOhm
Max. drain current: 30A
Max. power loss: 134W
Case: TO247
Manufacturer: ROHM
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Manufacturer:: ROHM - Japan Manufacturer part number: SCT3080ALGC11 RoHS Case style: TO247 Datasheet
In stock:
2 pcs.
Quantity of pcs. 1+ 2+ 4+ 10+ 20+
Net price (EUR) 12,4167 11,9257 11,5727 11,2524 11,0864
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Packaging:
2
Open channel resistance: 104mOhm
Max. drain current: 30A
Max. power loss: 134W
Case: TO247
Manufacturer: ROHM
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Max. gate-source Voltage: 22V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT

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