SCT3080KLGC11

Symbol Micros: TSCT3080klgc11
Contractor Symbol:
Case : TO247
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SiC-N-Ch 1200V 31A 165W 0,104T TO247 SCT3080KLGC11 : Rohm
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Parameters
Open channel resistance: 104mOhm
Max. drain current: 31A
Max. power loss: 165W
Case: TO247
Manufacturer: ROHM
Max. drain-source voltage: 1200V
Transistor type: N-MOSFET
Manufacturer:: ROHM - Japan Manufacturer part number: SCT3080KLGC11 RoHS Case style: TO247 Datasheet
In stock:
2 pcs.
Quantity of pcs. 1+ 2+ 4+ 10+ 20+
Net price (EUR) 15,1918 14,6892 14,3221 13,9855 13,8101
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Packaging:
2
Open channel resistance: 104mOhm
Max. drain current: 31A
Max. power loss: 165W
Case: TO247
Manufacturer: ROHM
Max. drain-source voltage: 1200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 22V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT

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