SCT3160KLGC11

Symbol Micros: TSCT3160klgc11
Contractor Symbol:
Case : TO247
SiC-N-Ch 1200V 17A 103W 0,208R TO247 SCT3160KLGC11 : Rohm
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Parameters
Open channel resistance: 208mOhm
Max. drain current: 17A
Max. power loss: 103W
Case: TO247
Manufacturer: ROHM
Max. drain-source voltage: 1200V
Transistor type: N-MOSFET
Manufacturer:: ROHM - Japan Manufacturer part number: SCT3160KLGC11 RoHS Case style: TO247 Datasheet
In stock:
2 pcs.
Quantity of pcs. 1+ 2+ 4+ 10+ 20+
Net price (EUR) 10,6118 10,1933 9,8918 9,6159 9,4756
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Packaging:
2
Open channel resistance: 208mOhm
Max. drain current: 17A
Max. power loss: 103W
Case: TO247
Manufacturer: ROHM
Max. drain-source voltage: 1200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 22V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT