SI1012R-T1-GE3

Symbol Micros: TSI1012r

107552

TSI1012r

Contractor Symbol:

Case : SC75-3 (SOT416)

Datasheet

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N-MOSFET 20V 0.5A

Parameters

Open channel resistance:	1,25Ohm
Max. drain current:	500mA
Max. power loss:	150mW
Case:	SC75-3 (SOT416)
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Vishay Manufacturer part number: SI1012R-T1-GE3 RoHS Case style: SC75-3 (SOT416) Datasheet

In stock:

420 pcs.

Quantity of pcs.	2+	10+	50+	200+	500+
Net price (EUR)	0,4686	0,2821	0,2157	0,1942	0,1874

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Packaging:
500 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	1,25Ohm
Max. drain current:	500mA
Max. power loss:	150mW
Case:	SC75-3 (SOT416)
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	6V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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