SI2301S SOT23 BORN
Symbol Micros:
TSI2301s BORN
Case : SOT23
P-Channel -20V 2.3A 1V @ 250uA 210m? @ 1A,2.5V 1W SOT-23 MOSFETs RoHS
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Parameters
Open channel resistance: | 210mOhm |
Max. drain current: | 2,3A |
Max. power loss: | 1W |
Case: | SOT23 |
Manufacturer: | BORN |
Max. drain-source voltage: | 20V |
Transistor type: | P-MOSFET |
Open channel resistance: | 210mOhm |
Max. drain current: | 2,3A |
Max. power loss: | 1W |
Case: | SOT23 |
Manufacturer: | BORN |
Max. drain-source voltage: | 20V |
Transistor type: | P-MOSFET |
Max. gate-source Voltage: | 10V |
Operating temperature (range): | -50°C ~ 150°C |
Mounting: | SMD |
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