SI2304DDS-T1-GE3 VISHAY
Symbol Micros:
TSI2304dds
Case : SOT23
Transistor N-Channel MOSFET; 30V; 3,3A; 60mOhm; -/+20V; 1,1W; -55°C~150°C; Substitute: SI2304DDS-T1-GE3;
Any questions? We will be happy to answer.
Write sales // micros.com.pl or call: +48 785 054 437
Write sales // micros.com.pl or call: +48 785 054 437
Parameters
| Open channel resistance: | 60mOhm |
| Max. drain current: | 3,3A |
| Max. power loss: | 1,1W |
| Case: | SOT23 |
| Manufacturer: | VISHAY |
| Max. drain-source voltage: | 30V |
| Max. drain-gate voltage: | 10V |
Manufacturer:: Vishay
Manufacturer part number: SI2304DDS-T1-GE3 RoHS
Case style: SOT23t/r
Datasheet
In stock:
500 pcs.
| Quantity of pcs. | 3+ | 20+ | 100+ | 500+ | 2000+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,3186 | 0,1703 | 0,1326 | 0,1199 | 0,1159 |
Manufacturer:: Vishay
Manufacturer part number: SI2304DDS-T1-GE3
Case style: SOT23
External warehouse:
105000 pcs.
| Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,1159 |
| Open channel resistance: | 60mOhm |
| Max. drain current: | 3,3A |
| Max. power loss: | 1,1W |
| Case: | SOT23 |
| Manufacturer: | VISHAY |
| Max. drain-source voltage: | 30V |
| Max. drain-gate voltage: | 10V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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