SI2304DDS-T1-GE3 VISHAY
Symbol Micros:
TSI2304dds
Case : SOT23
Transistor N-Channel MOSFET; 30V; 3,3A; 60mOhm; -/+20V; 1,1W; -55°C~150°C; Substitute: SI2304DDS-T1-GE3;
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Write sales // micros.com.pl or call: +48 785 054 437
Write sales // micros.com.pl or call: +48 785 054 437
Parameters
| Open channel resistance: | 60mOhm |
| Max. drain current: | 3,3A |
| Max. power loss: | 1,1W |
| Case: | SOT23 |
| Manufacturer: | VISHAY |
| Max. drain-source voltage: | 30V |
| Max. drain-gate voltage: | 10V |
| Open channel resistance: | 60mOhm |
| Max. drain current: | 3,3A |
| Max. power loss: | 1,1W |
| Case: | SOT23 |
| Manufacturer: | VISHAY |
| Max. drain-source voltage: | 30V |
| Max. drain-gate voltage: | 10V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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