SI2305CDS Vishay

Symbol Micros: TSI2305cds
Contractor Symbol:
Case : SOT23
Transistor P-MOSFET; 8V; 8V; 65mOhm; 5,8A; 1,7W; -55°C ~ 150°C; Odpowiednik: SI2305CDST1GE3; SI2305CDS-T1-GE3; SI2305DS; SI2305-TP; SI2305CDS-T1-BE3; KSI2305CDS-T1-GE3;
Parameters
Open channel resistance: 65mOhm
Max. drain current: 5,8A
Max. power loss: 1,7W
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 8V
Transistor type: P-MOSFET
Manufacturer:: KUU Manufacturer part number: SI2305CDS-T1-GE3 RoHS Case style: SOT23t/r  
In stock:
300 pcs.
Quantity of pcs. 5+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,2462 0,1231 0,0734 0,0607 0,0546
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Packaging:
300
Manufacturer:: Vishay Manufacturer part number: SI2305CDS-T1-GE3 Case style: SOT23  
External warehouse:
3000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1188
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: - Manufacturer part number: SI2305CDS-T1-GE3 Case style: SOT23  
External warehouse:
18000 pcs.
Quantity of pcs. 1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0966
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 65mOhm
Max. drain current: 5,8A
Max. power loss: 1,7W
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 8V
Transistor type: P-MOSFET
Max. gate-source Voltage: 8V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD