SI2308BDS
Symbol Micros:
TSI2308bds
Case : SOT23
Transistor N-MOSFET; 60V; 20V; 192mOhm; 2,3A; 1,66W; -55°C~150°C; Substitute: SI2308BDS-T1-GE3; SI2308BDS-T1-E3; SI2308BDS-T1-GE3CT-ND;
Parameters
Open channel resistance: | 192mOhm |
Max. drain current: | 2,3A |
Max. power loss: | 1,66W |
Case: | SOT23 |
Manufacturer: | VISHAY |
Max. drain-source voltage: | 60V |
Transistor type: | N-MOSFET |
Manufacturer:: Vishay
Manufacturer part number: SI2308BDS-T1-GE3
Case style: SOT23
External warehouse:
18000 pcs.
Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,1194 |
Manufacturer:: -
Manufacturer part number: SI2308BDS-T1-E3
Case style: SOT23
External warehouse:
9000 pcs.
Quantity of pcs. | 1+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,1127 |
Open channel resistance: | 192mOhm |
Max. drain current: | 2,3A |
Max. power loss: | 1,66W |
Case: | SOT23 |
Manufacturer: | VISHAY |
Max. drain-source voltage: | 60V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | SMD |
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