SI2309CDS-T1-GE3

Symbol Micros: TSI2309cds
Contractor Symbol:
Case : SOT23
Transistor P-MOSFET; 60V; 20V; 450mOhm; 1,6A; 1,7W; -55°C ~ 150°C; Replacement: SI2309CDS-T1-GE3; SI2309CDS-T1-E3; G05P06L; SI2309CDS-T1-GE3; SI2309CDS VISHAY;
Parameters
Open channel resistance: 450mOhm
Max. drain current: 1,6A
Max. power loss: 1,7W
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Manufacturer:: Vishay Manufacturer part number: SI2309CDS-T1-GE3 RoHS Case style: SOT23t/r Datasheet
In stock:
1490 pcs.
Quantity of pcs. 3+ 10+ 50+ 300+ 1500+
Net price (EUR) 0,4033 0,2658 0,1905 0,1632 0,1553
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Packaging:
1500
Manufacturer:: - Manufacturer part number: SI2309CDS-T1-GE3 Case style: SOT23  
External warehouse:
213000 pcs.
Quantity of pcs. 1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1553
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Vishay Manufacturer part number: SI2309CDS-T1-E3 Case style: SOT23  
External warehouse:
42000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1553
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Vishay Manufacturer part number: SI2309CDS-T1-GE3 Case style: SOT23  
External warehouse:
96000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1553
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 450mOhm
Max. drain current: 1,6A
Max. power loss: 1,7W
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD