SI2315BDS-T1-E3 Vishay

Symbol Micros: TSI2315bds
Contractor Symbol:
Case : SOT23
P-MOSFET 12V 3A 50mΩ 750mW
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Parameters
Open channel resistance: 100mOhm
Max. drain current: 3A
Max. power loss: 750mW
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 12V
Transistor type: P-MOSFET
Manufacturer:: Vishay Manufacturer part number: SI2315BDS-T1-E3 RoHS Case style: SOT23-3 t/r Datasheet
In stock:
140 pcs.
Quantity of pcs. 3+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,3814 0,2504 0,1788 0,1563 0,1465
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Packaging:
200
Manufacturer:: Vishay Manufacturer part number: SI2315BDS-T1-E3 Case style: SOT23  
External warehouse:
132000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1816
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Vishay Manufacturer part number: SI2315BDS-T1-GE3 Case style: SOT23  
External warehouse:
3000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1816
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 100mOhm
Max. drain current: 3A
Max. power loss: 750mW
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 12V
Transistor type: P-MOSFET
Max. gate-source Voltage: 8V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD