SI2333DS-T1-E3

Symbol Micros: TSI2333ds

91694

TSI2333ds

Contractor Symbol:

Case : SOT23

Datasheet

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P-MOSFET 12V 4.1A 0.75W

Parameters

Open channel resistance:	59mOhm
Max. drain current:	4,1A
Max. power loss:	750mW
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	12V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Vishay Manufacturer part number: SI2333DS-T1-E3 E3.. Case style: SOT23t/r Datasheet

In stock:

141 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,5642	0,3567	0,2821	0,2565	0,2448

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Packaging:
200 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	59mOhm
Max. drain current:	4,1A
Max. power loss:	750mW
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	12V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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