SI2337DS-T1-GE3

Symbol Micros: TSI2337ds
Contractor Symbol:
Case : SOT23
P-MOSFET 2.2A 80V 2.5W 0.27Ω SI2337DS-T1-E3
Parameters
Open channel resistance: 303mOhm
Max. drain current: 2,2A
Max. power loss: 2,5W
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 80V
Transistor type: P-MOSFET
Manufacturer:: Vishay Manufacturer part number: SI2337DS-T1-GE3 RoHS Case style: SOT23t/r Datasheet
In stock:
10 pcs.
Quantity of pcs. 2+ 10+ 30+ 100+ 400+
Net price (EUR) 0,8953 0,5619 0,4663 0,4150 0,3893
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Packaging:
100
Manufacturer:: Vishay Manufacturer part number: SI2337DS-T1-GE3 Case style: SOT23  
External warehouse:
6000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,3893
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Vishay Manufacturer part number: SI2337DS-T1-GE3 Case style: SOT23  
External warehouse:
11470 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,3893
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 303mOhm
Max. drain current: 2,2A
Max. power loss: 2,5W
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 80V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD