SI2337DS-T1-GE3
Symbol Micros:
TSI2337ds
Case : SOT23
P-MOSFET 2.2A 80V 2.5W 0.27Ω SI2337DS-T1-E3
Parameters
Open channel resistance: | 303mOhm |
Max. drain current: | 2,2A |
Max. power loss: | 2,5W |
Case: | SOT23 |
Manufacturer: | VISHAY |
Max. drain-source voltage: | 80V |
Transistor type: | P-MOSFET |
Manufacturer:: Vishay
Manufacturer part number: SI2337DS-T1-GE3 RoHS
Case style: SOT23t/r
Datasheet
In stock:
10 pcs.
Quantity of pcs. | 2+ | 10+ | 30+ | 100+ | 400+ |
---|---|---|---|---|---|
Net price (EUR) | 0,8953 | 0,5619 | 0,4663 | 0,4150 | 0,3893 |
Manufacturer:: Vishay
Manufacturer part number: SI2337DS-T1-GE3
Case style: SOT23
External warehouse:
6000 pcs.
Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,3893 |
Manufacturer:: Vishay
Manufacturer part number: SI2337DS-T1-GE3
Case style: SOT23
External warehouse:
11470 pcs.
Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,3893 |
Open channel resistance: | 303mOhm |
Max. drain current: | 2,2A |
Max. power loss: | 2,5W |
Case: | SOT23 |
Manufacturer: | VISHAY |
Max. drain-source voltage: | 80V |
Transistor type: | P-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | SMD |
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