LGE3415ES
Symbol Micros:
TSI3415B-TP LGE
Case : SOT23
P-CHANNEL MOSFET, SOT-23 Substitute: SI3415B-TP;
Parameters
Open channel resistance: | 50mOhm |
Max. drain current: | -4A |
Max. power loss: | 1,4W |
Case: | SOT23 |
Manufacturer: | LGE |
Max. drain-source voltage: | -20V |
Transistor type: | P-MOSFET |
Open channel resistance: | 50mOhm |
Max. drain current: | -4A |
Max. power loss: | 1,4W |
Case: | SOT23 |
Manufacturer: | LGE |
Max. drain-source voltage: | -20V |
Transistor type: | P-MOSFET |
Max. gate-source Voltage: | 10V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | SMD |
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