SI3459BDV-T1-E3
Symbol Micros:
TSI3459bdv
Case : TSOP06
Transistor P-Channel MOSFET; 60V; 20V; 288mOhm; 2,9A; 3,3W; -55°C ~ 150°C;
Any questions? We will be happy to answer.
Write sales // micros.com.pl or call: +48 785 054 437
Write sales // micros.com.pl or call: +48 785 054 437
Parameters
| Open channel resistance: | 288mOhm |
| Max. drain current: | 2,9A |
| Max. power loss: | 3,3W |
| Case: | TSOP06 |
| Manufacturer: | VISHAY |
| Max. drain-source voltage: | 60V |
| Transistor type: | P-MOSFET |
Manufacturer:: Siliconix
Manufacturer part number: SI3459BDV-T1-GE3 RoHS AS..
Case style: TSOP06 t/r
In stock:
50 pcs.
| Quantity of pcs. | 2+ | 10+ | 50+ | 200+ | 1000+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,8720 | 0,5518 | 0,4349 | 0,3974 | 0,3787 |
| Open channel resistance: | 288mOhm |
| Max. drain current: | 2,9A |
| Max. power loss: | 3,3W |
| Case: | TSOP06 |
| Manufacturer: | VISHAY |
| Max. drain-source voltage: | 60V |
| Transistor type: | P-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
Add Symbol
Cancel
All Contractor Symbols