SI3900DV

Symbol Micros: TSI3900dv

200449

TSI3900dv

Contractor Symbol:

Case : TSOP06

Datasheet

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Trans MOSFET N-CH 20V 2A 6-Pin TSOP Subsitute: SI3900DV-T1-E3; SI3900DV-T1; SI3900DV;

Parameters

Open channel resistance:	200mOhm
Max. drain current:	2A
Max. power loss:	830mW
Case:	TSOP06
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Transistor type:	2xN-MOSFET

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• Parameters

Open channel resistance:	200mOhm
Max. drain current:	2A
Max. power loss:	830mW
Case:	TSOP06
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Transistor type:	2xN-MOSFET
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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