SI4178DY-T1-GE3 Vishay

Symbol Micros: TSI4178dy
Contractor Symbol:
Case : SOIC08
N-MOSFET 30V 12A 21mΩ 5W
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Parameters
Open channel resistance: 33mOhm
Max. drain current: 12A
Max. power loss: 5W
Case: SOIC08
Manufacturer: VISHAY
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Manufacturer:: Siliconix Manufacturer part number: SI4178DY-T1-GE3 RoHS Case style: SOIC08t/r  
In stock:
30 pcs.
Quantity of pcs. 2+ 15+ 100+ 300+ 1000+
Net price (EUR) 0,5427 0,3018 0,2386 0,2241 0,2171
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Packaging:
100
Manufacturer:: Vishay Manufacturer part number: SI4178DY-T1-GE3 Case style: SOIC08  
External warehouse:
5000 pcs.
Quantity of pcs. 1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,2171
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Packaging:
2500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Vishay Manufacturer part number: SI4178DY-T1-GE3 Case style: SOIC08  
External warehouse:
1650 pcs.
Quantity of pcs. 50+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,2171
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 33mOhm
Max. drain current: 12A
Max. power loss: 5W
Case: SOIC08
Manufacturer: VISHAY
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Max. gate-source Voltage: 25V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD