SI4431CDY-T1-GE3 Vishay

Symbol Micros: TSI4431cdy
Contractor Symbol:
Case : SOIC08
P-MOSFET 30V 9A 2.5W 32mΩ
Any questions? We will be happy to answer.
Write sales // micros.com.pl or call: +48 785 054 437
Parameters
Open channel resistance: 49mOhm
Max. drain current: 9A
Max. power loss: 4,2W
Case: SOIC08
Manufacturer: VISHAY
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
Manufacturer:: Siliconix Manufacturer part number: SI4431CDY-T1-GE3 RoHS Case style: SOIC08t/r  
In stock:
25 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,6659 0,4229 0,3341 0,3038 0,2897
Add to comparison tool
Packaging:
50
Open channel resistance: 49mOhm
Max. drain current: 9A
Max. power loss: 4,2W
Case: SOIC08
Manufacturer: VISHAY
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD