SI4435DDY

Symbol Micros: TSI4435ddy
Contractor Symbol:
Case : SOP08
Transistor P-Channel MOSFET; 30V; 20V; 35mOhm; 11,4A; 5W; -55°C ~ 150°C;
Parameters
Open channel resistance: 35mOhm
Max. drain current: 11,4A
Max. power loss: 5W
Case: SOP08
Manufacturer: VISHAY
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
Manufacturer:: Siliconix Manufacturer part number: SI4435DDY-T1-GE3 RoHS Case style: SOP08t/r  
In stock:
75 pcs.
Quantity of pcs. 2+ 10+ 30+ 100+ 400+
Net price (EUR) 0,5515 0,3467 0,2862 0,2560 0,2397
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Packaging:
100
Manufacturer:: Vishay Manufacturer part number: SI4435DDY-T1-GE3 Case style: SOP08  
External warehouse:
5000 pcs.
Quantity of pcs. 2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,2397
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Packaging:
2500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Vishay Manufacturer part number: SI4435DDY-T1-GE3 Case style: SOP08  
External warehouse:
800 pcs.
Quantity of pcs. 50+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,2563
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Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Vishay Manufacturer part number: SI4435DDY-T1-GE3 Case style: SOP08  
External warehouse:
15000 pcs.
Quantity of pcs. 2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,2397
Add to comparison tool
Packaging:
2500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 35mOhm
Max. drain current: 11,4A
Max. power loss: 5W
Case: SOP08
Manufacturer: VISHAY
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD