SI6968BEDQ

Symbol Micros: TSI6968bedq

79462

TSI6968bedq

Contractor Symbol:

Case : TSSOP08 t/r

Datasheet

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2x N-MOSFET 5.2A 20V 1W 0.0022Ω

Parameters

Open channel resistance:	30mOhm
Max. drain current:	5,2A
Max. power loss:	1W
Case:	TSSOP08 t/r
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Transistor type:	2xN-MOSFET

All parameters

Manufacturer:: Siliconix Manufacturer part number: SI6968BEDQ RoHS Case style: TSSOP08 t/r  

In stock:

64 pcs.

Quantity of pcs.	2+	10+	30+	100+	400+
Net price (EUR)	0,8306	0,5218	0,4333	0,3854	0,3614

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Packaging:
100 Quantity (multiple: 1)

- +

Manufacturer:: Vishay Manufacturer part number: SI6968BEDQ-T1-E3 Case style: TSSOP08 t/r  

External warehouse:

3000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,4290

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Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	30mOhm
Max. drain current:	5,2A
Max. power loss:	1W
Case:	TSSOP08 t/r
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Transistor type:	2xN-MOSFET
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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