SI7139DP smd Vishay

Symbol Micros: TSI7139dp
Contractor Symbol:
Case : SO-8
P-MOSFET 30V 40A 5W SI7139DP-GE3 SI7139DP-T1-GE3
Parameters
Open channel resistance: 9mOhm
Max. drain current: 40A
Max. power loss: 48W
Case: SO-8
Manufacturer: VISHAY
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
Manufacturer:: Siliconix Manufacturer part number: SI7139DP T1-GE3 RoHS Case style: SO-8  
In stock:
50 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,7001 1,3573 1,1614 1,0425 1,0005
Add to comparison tool
Packaging:
50
Manufacturer:: Vishay Manufacturer part number: SI7139DP-T1-GE3 Case style: SO-8  
External warehouse:
3000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 1,0005
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Vishay Manufacturer part number: SI7139DP-T1-GE3 Case style: SO-8  
External warehouse:
2500 pcs.
Quantity of pcs. 25+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 1,0005
Add to comparison tool
Packaging:
25
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Vishay Manufacturer part number: SI7139DP-T1-GE3 Case style: SO-8  
External warehouse:
3000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 1,0005
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 9mOhm
Max. drain current: 40A
Max. power loss: 48W
Case: SO-8
Manufacturer: VISHAY
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD