SI9926BDY

Symbol Micros: TSI9926bdy

37566

TSI9926bdy

Contractor Symbol:

Case : SOP08

Datasheet

Technical drawing Add to favourites

Transistor 2xN-Channel MOSFET; 20V; 12V; 30mOhm; 6,2A; 1,14W; -55°C ~ 150°C; SI9926BDY-T1-E3, SI9926BDY-T1-GE3

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Parameters

Open channel resistance:	30mOhm
Max. drain current:	6,2A
Max. power loss:	1,14W
Case:	SOP08
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Transistor type:	2xN-MOSFET

All parameters

Manufacturer:: Siliconix Manufacturer part number: SI9926BDY-T1-E3 RoHS Case style: SOP08t/r  

In stock:

200 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,6622	0,4188	0,3299	0,3018	0,2878

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Packaging:
200 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	30mOhm
Max. drain current:	6,2A
Max. power loss:	1,14W
Case:	SOP08
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Transistor type:	2xN-MOSFET
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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