SIHP12N60E-E3 Vishay
Symbol Micros:
TSIHP12n60e
Case : TO220
Transistors N-Channel MOSFET; 600V; 30V; 380mOhm; 12A; 147W; -55°C ~ 150°C; Substitute: SIHP12N60E-GE3;
Any questions? We will be happy to answer.
Write sales // micros.com.pl or call: +48 785 054 437
Write sales // micros.com.pl or call: +48 785 054 437
Parameters
Open channel resistance: | 380mOhm |
Max. drain current: | 12A |
Max. power loss: | 147W |
Case: | TO220 |
Manufacturer: | VISHAY |
Max. drain-source voltage: | 600V |
Max. drain-gate voltage: | 30V |
Open channel resistance: | 380mOhm |
Max. drain current: | 12A |
Max. power loss: | 147W |
Case: | TO220 |
Manufacturer: | VISHAY |
Max. drain-source voltage: | 600V |
Max. drain-gate voltage: | 30V |
Transistor type: | MOSFET |
Max. gate-source Voltage: | 10V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | THT |
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