SIHP12N60E-E3 Vishay
Symbol Micros:
TSIHP12n60e
Case : TO220
Transistors N-Channel MOSFET; 600V; 30V; 380mOhm; 12A; 147W; -55°C ~ 150°C; Substitute: SIHP12N60E-GE3;
Parameters
| Open channel resistance: | 380mOhm |
| Max. drain current: | 12A |
| Max. power loss: | 147W |
| Case: | TO220 |
| Manufacturer: | VISHAY |
| Max. drain-source voltage: | 600V |
| Max. drain-gate voltage: | 30V |
Manufacturer:: Vishay
Manufacturer part number: SIHP12N60E-GE3
Case style: TO220
External warehouse:
1000 pcs.
| Quantity of pcs. | 150+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 1,0595 |
Manufacturer:: Vishay
Manufacturer part number: SIHP12N60E-GE3
Case style: TO220
External warehouse:
700 pcs.
| Quantity of pcs. | 150+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 1,1155 |
| Open channel resistance: | 380mOhm |
| Max. drain current: | 12A |
| Max. power loss: | 147W |
| Case: | TO220 |
| Manufacturer: | VISHAY |
| Max. drain-source voltage: | 600V |
| Max. drain-gate voltage: | 30V |
| Transistor type: | MOSFET |
| Max. gate-source Voltage: | 10V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | THT |
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