SIRA28BDP-T1-GE3 Vishay Siliconix

Symbol Micros: TSIRA28bdp

257434

TSIRA28bdp

Contractor Symbol:

Case : PPAK-SO8

Datasheet

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MOSFET N-CH 30V POWERPAK SO-8

Parameters

Open channel resistance:	12mOhm
Max. drain current:	38A
Max. power loss:	17W
Case:	PPAK-SO8
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Vishay Manufacturer part number: SIRA28BDP-T1-GE3 RoHS Case style: PPAK-SO8 Datasheet

In stock:

10 pcs.

Quantity of pcs.	1+	5+	20+	110+	550+
Net price (EUR)	1,0048	0,6691	0,5525	0,4966	0,4779

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Packaging:
110 Quantity (multiple: 1)

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Manufacturer:: Vishay Manufacturer part number: SIRA28BDP-T1-GE3 Case style: PPAK-SO8  

External warehouse:

3000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,4779

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Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	12mOhm
Max. drain current:	38A
Max. power loss:	17W
Case:	PPAK-SO8
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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