SIRA99DP

Symbol Micros: TSIRA99dp

365380

TSIRA99dp

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Datasheet

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Transistor P-Channel MOSFET; PPAK; 30V; 16V; 47,9A/195A; 1,7mOhm; 6,35W; -55°C~150°C; Substitute: SIRA99DP-T1-GE3;

Parameters

Open channel resistance:	1,7mOhm
Max. drain current:	47,9A
Max. power loss:	6,35W
Case:	PPAK-SO8
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Max. drain-gate voltage:	20V

All parameters

Manufacturer:: Vishay Manufacturer part number: SIRA99DP-T1-GE3 Case style: PPAK-SO8  

External warehouse:

3000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,2328

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Packaging:
3000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	1,7mOhm
Max. drain current:	47,9A
Max. power loss:	6,35W
Case:	PPAK-SO8
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Max. drain-gate voltage:	20V
Transistor type:	MOSFET
Max. gate-source Voltage:	16V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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