SISH110DN-T1-GE3 Vishay Siliconix
Symbol Micros:
TSISH110dn
Case : PPAK1212
N-Channel MOSFET; 20V; 20V; 7,8mOhm; 13,5A; 1,5W; -55°C ~ 150°C;
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Write sales // micros.com.pl or call: +48 785 054 437
Write sales // micros.com.pl or call: +48 785 054 437
Parameters
| Open channel resistance: | 7,8mOhm |
| Max. drain current: | 13,5A |
| Max. power loss: | 1,5W |
| Case: | PPAK1212 |
| Manufacturer: | Vishay |
| Max. drain-source voltage: | 20V |
| Transistor type: | N-MOSFET |
Manufacturer:: Vishay
Manufacturer part number: SISH110DN-T1-GE3 RoHS
Case style: PPAK1212
In stock:
20 pcs.
| Quantity of pcs. | 1+ | 5+ | 20+ | 100+ | 400+ |
|---|---|---|---|---|---|
| Net price (EUR) | 1,4113 | 0,9884 | 0,8412 | 0,7687 | 0,7430 |
| Open channel resistance: | 7,8mOhm |
| Max. drain current: | 13,5A |
| Max. power loss: | 1,5W |
| Case: | PPAK1212 |
| Manufacturer: | Vishay |
| Max. drain-source voltage: | 20V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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