SISS22DN-T1-GE3 Vishay Siliconix
Symbol Micros:
TSISS22dn
Case : PPAK-SO8
MOSFET N-CH 60V PPAK 1212-8S
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Write sales // micros.com.pl or call: +48 785 054 437
Write sales // micros.com.pl or call: +48 785 054 437
Parameters
| Open channel resistance: | 5mOhm |
| Max. drain current: | 90,6A |
| Max. power loss: | 65,7W |
| Case: | PPAK-SO8 |
| Manufacturer: | VISHAY |
| Max. drain-source voltage: | 60V |
| Transistor type: | N-MOSFET |
| Open channel resistance: | 5mOhm |
| Max. drain current: | 90,6A |
| Max. power loss: | 65,7W |
| Case: | PPAK-SO8 |
| Manufacturer: | VISHAY |
| Max. drain-source voltage: | 60V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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