SKM100GB12T4

Symbol Micros: TSKM100gb12t4

263272

TSKM100gb12t4

Contractor Symbol:

Case : Rys.SKM100

Datasheet

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Trans IGBT Module N-CH 1200V 160A 7-Pin Case GB

Parameters

Gate charge:	565nC
Max. collector current:	100A
Max collector current (impulse):	300A
Forvard volatge [Vgeth]:	5,0V ~ 6,5V
Case:	Rys.SKM100
Manufacturer:	SEMIKRON
Collector-emitter voltage:	1200V

All parameters

         

 

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• Parameters

Gate charge:	565nC
Max. collector current:	100A
Max collector current (impulse):	300A
Forvard volatge [Vgeth]:	5,0V ~ 6,5V
Case:	Rys.SKM100
Manufacturer:	SEMIKRON
Collector-emitter voltage:	1200V
Operating temperature (range):	-40°C ~ 175°C
Gate-emitter voltage:	20V
Transistor type:	IGBT

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