SPB17N80C3

Symbol Micros: TSPB17n80c3
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Case : TO263 (D2PAK)
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Transistor N-Channel MOSFET; 800V; 20V; 670mOhm; 17A; 227W; -55°C ~ 150°C;
Parameters
Open channel resistance: 670mOhm
Max. drain current: 17A
Max. power loss: 227W
Case: TO263 (D2PAK)
Manufacturer: Infineon Technologies
Max. drain-source voltage: 800V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: SPB17N80C3 RoHS Case style: TO263t/r (D2PAK) Datasheet
In stock:
15 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 200+
Net price (EUR) 3,2358 2,7826 2,6041 2,5102 2,4891
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Packaging:
20
Open channel resistance: 670mOhm
Max. drain current: 17A
Max. power loss: 227W
Case: TO263 (D2PAK)
Manufacturer: Infineon Technologies
Max. drain-source voltage: 800V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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