SPB17N80C3
Symbol Micros:
TSPB17n80c3
Case : TO263 (D2PAK)
Transistor N-Channel MOSFET; 800V; 20V; 670mOhm; 17A; 227W; -55°C ~ 150°C;
Parameters
| Open channel resistance: | 670mOhm |
| Max. drain current: | 17A |
| Max. power loss: | 227W |
| Case: | TO263 (D2PAK) |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 800V |
| Transistor type: | N-MOSFET |
Manufacturer:: Infineon
Manufacturer part number: SPB17N80C3 RoHS
Case style: TO263t/r (D2PAK)
Datasheet
In stock:
15 pcs.
| Quantity of pcs. | 1+ | 5+ | 20+ | 100+ | 200+ |
|---|---|---|---|---|---|
| Net price (EUR) | 3,2126 | 2,7627 | 2,5855 | 2,4922 | 2,4713 |
Manufacturer:: Infineon
Manufacturer part number: SPB17N80C3ATMA1
Case style: TO263 (D2PAK)
External warehouse:
70000 pcs.
| Quantity of pcs. | 1000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 2,4713 |
Manufacturer:: Infineon
Manufacturer part number: SPB17N80C3ATMA1
Case style: TO263 (D2PAK)
External warehouse:
4000 pcs.
| Quantity of pcs. | 1000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 2,4713 |
| Open channel resistance: | 670mOhm |
| Max. drain current: | 17A |
| Max. power loss: | 227W |
| Case: | TO263 (D2PAK) |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 800V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
Add Symbol
Cancel
All Contractor Symbols