SPB20N60S5

Symbol Micros: TSPB20n60s5

57981

TSPB20n60s5

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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N-MOSFET 20A 600V 208W 0.19Ω

Parameters

Open channel resistance:	190mOhm
Max. drain current:	20A
Max. power loss:	208W
Case:	TO263 (D2PAK)
Manufacturer:	Siemens
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: SPB20N60S5ATMA1 Case style: TO263 (D2PAK)  

External warehouse:

1000 pcs.

Quantity of pcs.	1000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,9397

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Packaging:
1000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	190mOhm
Max. drain current:	20A
Max. power loss:	208W
Case:	TO263 (D2PAK)
Manufacturer:	Siemens
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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