SPD06N80C3
Symbol Micros:
TSPD06n80c3
Case : TO252 (DPACK)
Transistor N-Channel MOSFET; 800V; 20V; 2,1Ohm; 6A; 83W; -55°C ~ 150°C; SPD06N80C3ATMA1, SPD06N80C3BTMA1
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Write sales // micros.com.pl or call: +48 785 054 437
Write sales // micros.com.pl or call: +48 785 054 437
Parameters
Open channel resistance: | 2,1Ohm |
Max. drain current: | 6A |
Max. power loss: | 83W |
Case: | TO252 (DPACK) |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 800V |
Transistor type: | N-MOSFET |
Open channel resistance: | 2,1Ohm |
Max. drain current: | 6A |
Max. power loss: | 83W |
Case: | TO252 (DPACK) |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 800V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | SMD |
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