SPD07N60C3
Symbol Micros:
TSPD07n60c3
Case : TO252 (DPACK)
Transistor N-MOSFET; 650V; 20V; 1,46Ohm; 7,3A; 83W; -55°C ~ 150°C; SPD07N60C3ATMA1; SPD07N60C3BTMA1;
Parameters
Open channel resistance: | 1,46Ohm |
Max. drain current: | 7,3A |
Max. power loss: | 83W |
Case: | TO252 (DPACK) |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 650V |
Transistor type: | N-MOSFET |
Manufacturer:: Infineon
Manufacturer part number: SPD07N60C3 RoHS
Case style: TO252 (DPACK) t/r
Datasheet
In stock:
100 pcs.
Quantity of pcs. | 1+ | 5+ | 20+ | 100+ | 400+ |
---|---|---|---|---|---|
Net price (EUR) | 1,2287 | 0,8606 | 0,7316 | 0,6683 | 0,6472 |
Manufacturer:: Infineon
Manufacturer part number: SPD07N60C3ATMA1
Case style: TO252 (DPACK)
External warehouse:
2500 pcs.
Quantity of pcs. | 2500+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,6472 |
Open channel resistance: | 1,46Ohm |
Max. drain current: | 7,3A |
Max. power loss: | 83W |
Case: | TO252 (DPACK) |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 650V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | SMD |
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