SPD07N60C3

Symbol Micros: TSPD07n60c3
Contractor Symbol:
Case : TO252 (DPACK)
Transistor N-MOSFET; 650V; 20V; 1,46Ohm; 7,3A; 83W; -55°C ~ 150°C; SPD07N60C3ATMA1; SPD07N60C3BTMA1;
Parameters
Open channel resistance: 1,46Ohm
Max. drain current: 7,3A
Max. power loss: 83W
Case: TO252 (DPACK)
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: SPD07N60C3 RoHS Case style: TO252 (DPACK) t/r Datasheet
In stock:
100 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 400+
Net price (EUR) 1,2287 0,8606 0,7316 0,6683 0,6472
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Packaging:
100
Manufacturer:: Infineon Manufacturer part number: SPD07N60C3ATMA1 Case style: TO252 (DPACK)  
External warehouse:
2500 pcs.
Quantity of pcs. 2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,6472
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Packaging:
2500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 1,46Ohm
Max. drain current: 7,3A
Max. power loss: 83W
Case: TO252 (DPACK)
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD