SPD09P06PL G

Symbol Micros: TSPD09p06pl
Contractor Symbol:
Case : TO252 (DPACK)
Transistor P-Channel MOSFET; 60V; 20V; 400mOhm; 9,7A; 42W; -55°C ~ 175°C; SPD09P06PLGBTMA1
Parameters
Open channel resistance: 400mOhm
Max. drain current: 9,7A
Max. power loss: 42W
Case: TO252 (DPACK)
Manufacturer: Infineon Technologies
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Manufacturer:: Infineon Manufacturer part number: SPD09P06PLGBTMA1 RoHS Case style: TO252 (DPACK) t/r Datasheet
In stock:
50 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,0001 0,7346 0,5886 0,5049 0,4761
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Packaging:
50
Manufacturer:: Infineon Manufacturer part number: SPD09P06PLGBTMA1 RoHS Case style: TO252 (DPACK) Datasheet
In stock:
12 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,0001 0,7346 0,5886 0,5049 0,4761
Add to comparison tool
Packaging:
50
Open channel resistance: 400mOhm
Max. drain current: 9,7A
Max. power loss: 42W
Case: TO252 (DPACK)
Manufacturer: Infineon Technologies
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD