SPD18P06P G

Symbol Micros: TSPD18p06p
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Case : TO252 (DPACK)
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Transistor P-Channel MOSFET; 60V; 20V; 130mOhm; 18,6A; 80W; -55°C ~ 175°C; SPD18P06PGBTMA1
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Parameters
Open channel resistance: 130mOhm
Max. drain current: 18,6A
Max. power loss: 80W
Case: TO252 (DPACK)
Manufacturer: Infineon Technologies
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Manufacturer:: Infineon Manufacturer part number: SPD18P06PG RoHS Case style: TO252 (DPACK) t/r Datasheet
In stock:
31 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,1286 0,8272 0,6636 0,5701 0,5374
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Packaging:
50
Open channel resistance: 130mOhm
Max. drain current: 18,6A
Max. power loss: 80W
Case: TO252 (DPACK)
Manufacturer: Infineon Technologies
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD

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