SPD30P06P G
Symbol Micros:
TSPD30p06p
Case : TO252 (DPACK)
Transistor P-Channel MOSFET; 60V; 20V; 75mOhm; 30A; 125W; -55°C ~ 175°C; SPD30P06PGBTMA1
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Parameters
Open channel resistance: | 75mOhm |
Max. drain current: | 30A |
Max. power loss: | 125W |
Case: | TO252 (DPACK) |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 60V |
Transistor type: | P-MOSFET |
Open channel resistance: | 75mOhm |
Max. drain current: | 30A |
Max. power loss: | 125W |
Case: | TO252 (DPACK) |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 60V |
Transistor type: | P-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 175°C |
Mounting: | SMD |
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