SPP06N80C3

Symbol Micros: TSPP06N80C3
Contractor Symbol:
Case : TO220
Transistor N-Channel MOSFET; 800V; 20V; 2,1Ohm; 6A; 83W; -55°C ~ 150°C;
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Parameters
Open channel resistance: 2,1Ohm
Max. drain current: 6A
Max. power loss: 83W
Case: TO220
Manufacturer: Infineon Technologies
Max. drain-source voltage: 800V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: SPP06N80C3 RoHS Case style: TO220 Datasheet
In stock:
35 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,5086 1,2036 1,0300 0,9244 0,8869
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Packaging:
50
Manufacturer:: Infineon Manufacturer part number: SPP06N80C3XKSA1 Case style: TO220  
External warehouse:
87303 pcs.
Quantity of pcs. 500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,8869
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Packaging:
500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: SPP06N80C3XKSA1 Case style: TO220  
External warehouse:
198 pcs.
Quantity of pcs. 1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 1,6905
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Packaging:
1
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 2,1Ohm
Max. drain current: 6A
Max. power loss: 83W
Case: TO220
Manufacturer: Infineon Technologies
Max. drain-source voltage: 800V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT