SPP11N80C3XKSA1

Symbol Micros: TSPP11n80c3
Contractor Symbol:
Case : TO220
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N-Channel 800V 11A (Tc) 156W (Tc) Through Hole PG-TO220-3-1
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Parameters
Open channel resistance: 1,05Ohm
Max. drain current: 11A
Max. power loss: 156W
Case: TO220
Manufacturer: Infineon Technologies
Max. drain-source voltage: 800V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: SPP11N80C3XKSA1 RoHS Case style: TO220 Datasheet
In stock:
58 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 3,7152 3,1451 2,8016 2,5796 2,4932
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Packaging:
50
Open channel resistance: 1,05Ohm
Max. drain current: 11A
Max. power loss: 156W
Case: TO220
Manufacturer: Infineon Technologies
Max. drain-source voltage: 800V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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