SPP11N80C3XKSA1

Symbol Micros: TSPP11n80c3

139976

TSPP11n80c3

Contractor Symbol:

Case : TO220

Datasheet

Technical drawing Add to favourites

N-Channel 800V 11A (Tc) 156W (Tc) Through Hole PG-TO220-3-1

Parameters

Open channel resistance:	1,05Ohm
Max. drain current:	11A
Max. power loss:	156W
Case:	TO220
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	800V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: SPP11N80C3XKSA1 RoHS Case style: TO220 Datasheet

In stock:

54 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	3,7284	3,1562	2,8115	2,5888	2,5020

Add to comparison tool Add inquiry (RFQ)

Packaging:
50 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: SPP11N80C3XKSA1 Case style: TO220  

External warehouse:

2042 pcs.

Quantity of pcs.	150+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	2,5020

Add to comparison tool Add inquiry (RFQ)

Packaging:
50

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	1,05Ohm
Max. drain current:	11A
Max. power loss:	156W
Case:	TO220
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	800V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.