SPP20N60S5

Symbol Micros: TSPP20n60s5
Contractor Symbol:
Case : TO220
CoolMOS 20A 600V 208W 0.19Ω Qg=103nC
Parameters
Open channel resistance: 430mOhm
Max. drain current: 20A
Max. power loss: 208W
Case: TO220
Manufacturer: Infineon Technologies
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: SPP20N60S5XKSA1 RoHS Case style: TO220 Datasheet
In stock:
39 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 100+
Net price (EUR) 7,4122 6,2913 5,6043 5,1494 5,0415
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Packaging:
50
Manufacturer:: Infineon Manufacturer part number: SPP20N60S5XKSA1 Case style: TO220  
External warehouse:
335 pcs.
Quantity of pcs. 1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 5,0415
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Packaging:
1
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: SPP20N60S5XKSA1 Case style: TO220  
External warehouse:
4350 pcs.
Quantity of pcs. 100+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 5,0415
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 430mOhm
Max. drain current: 20A
Max. power loss: 208W
Case: TO220
Manufacturer: Infineon Technologies
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT