SPP20N60S5

Symbol Micros: TSPP20n60s5
Contractor Symbol:
Case : TO220
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CoolMOS 20A 600V 208W 0.19Ω Qg=103nC
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Parameters
Open channel resistance: 430mOhm
Max. drain current: 20A
Max. power loss: 208W
Case: TO220
Manufacturer: Infineon Technologies
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: SPP20N60S5XKSA1 RoHS Case style: TO220 Datasheet
In stock:
46 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 100+
Net price (EUR) 7,3860 6,2691 5,5845 5,1312 5,0237
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Packaging:
50
Open channel resistance: 430mOhm
Max. drain current: 20A
Max. power loss: 208W
Case: TO220
Manufacturer: Infineon Technologies
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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