SQ2309ES-T1_GE3 Vishay
Symbol Micros:
TSQ2309es
Case : SOT23
Transistor P-Channel MOSFET; 60V; 10V; 1,7A; 336mOhm; 2W; -55°C~175°C; Substitute: SQ2309ES-T1_GE3; SQ2309ES-T1-GE3; SQ2309ES-T1_GE3 VSIG; SQ2309ES-T1_BE3;
Parameters
Open channel resistance: | 336mOhm |
Max. drain current: | 1,7A |
Max. power loss: | 2W |
Case: | SOT23 |
Manufacturer: | VISHAY |
Max. drain-source voltage: | 60V |
Max. drain-gate voltage: | 4V |
Open channel resistance: | 336mOhm |
Max. drain current: | 1,7A |
Max. power loss: | 2W |
Case: | SOT23 |
Manufacturer: | VISHAY |
Max. drain-source voltage: | 60V |
Max. drain-gate voltage: | 4V |
Transistor type: | MOSFET |
Max. gate-source Voltage: | 10V |
Operating temperature (range): | -55°C ~ 175°C |
Mounting: | SMD |
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