SQ2309ES-T1_GE3 Vishay

Symbol Micros: TSQ2309es
Contractor Symbol:
Case : SOT23
Transistor P-Channel MOSFET; 60V; 10V; 1,7A; 336mOhm; 2W; -55°C~175°C; Substitute: SQ2309ES-T1_GE3; SQ2309ES-T1-GE3; SQ2309ES-T1_GE3 VSIG; SQ2309ES-T1_BE3;
Parameters
Open channel resistance: 336mOhm
Max. drain current: 1,7A
Max. power loss: 2W
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 60V
Max. drain-gate voltage: 4V
Manufacturer:: Vishay Manufacturer part number: SQ2309ES-T1-GE3 RoHS 8P.. Case style: SOT23t/r Datasheet
In stock:
100 pcs.
Quantity of pcs. 2+ 10+ 30+ 100+ 400+
Net price (EUR) 0,8139 0,5123 0,4237 0,3782 0,3543
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Packaging:
100
Open channel resistance: 336mOhm
Max. drain current: 1,7A
Max. power loss: 2W
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 60V
Max. drain-gate voltage: 4V
Transistor type: MOSFET
Max. gate-source Voltage: 10V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD