SQ2361AEES-T1_GE3

Symbol Micros: TSQ2361aees
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Case : SOT23-3
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Transistor P-Channel MOSFET; 60V; 20V; 170mOhm; 2.8A; 2W; -55°C~175°C; SQ2361AEES-T1-GE3; SQ2361AEES-T1_BE3;
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Parameters
Open channel resistance: 170mOhm
Max. drain current: 2,8A
Max. power loss: 2W
Case: SOT23-3
Manufacturer: VISHAY
Max. drain-source voltage: 60V
Max. drain-gate voltage: 10V
Manufacturer:: Vishay Manufacturer part number: SQ2361AEES-T1_GE3 RoHS 9C.. Case style: SOT23-3 t/r Datasheet
In stock:
85 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,8346 0,5284 0,4162 0,3787 0,3624
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Packaging:
200
Open channel resistance: 170mOhm
Max. drain current: 2,8A
Max. power loss: 2W
Case: SOT23-3
Manufacturer: VISHAY
Max. drain-source voltage: 60V
Max. drain-gate voltage: 10V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD

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