SQ2389ES-T1_GE3

Symbol Micros: TSQ2389es
Contractor Symbol:
Case : SOT23-3
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MOSFET P-CHAN 40V SO23 SQ2389ES-T1_GE3
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Parameters
Open channel resistance: 188mOhm
Max. drain current: 4,1A
Max. power loss: 3W
Case: SOT23-3
Manufacturer: VISHAY
Max. drain-source voltage: 40V
Transistor type: P-MOSFET
Manufacturer:: Vishay Manufacturer part number: SQ2389ES-T1_GE3 RoHS (A9xxx) Case style: SOT23t/r Datasheet
In stock:
4 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 500+
Net price (EUR) 1,1596 0,7715 0,6383 0,5751 0,5518
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Packaging:
20
Open channel resistance: 188mOhm
Max. drain current: 4,1A
Max. power loss: 3W
Case: SOT23-3
Manufacturer: VISHAY
Max. drain-source voltage: 40V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD

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