SQM120P06-07L

Symbol Micros: TSQM120p06-07l

257707

TSQM120p06-07l

Contractor Symbol:

Case : TO263

Datasheet

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Transistor P-MOSFET; 60V; 20V; 13mOhm; 120A; 375W; -55°C ~ 175°C; Substitute: SQM120P06-07L_GE3; SQM120P06-07L-GE3;

Parameters

Open channel resistance:	13mOhm
Max. drain current:	120A
Max. power loss:	375W
Case:	TO263
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	13mOhm
Max. drain current:	120A
Max. power loss:	375W
Case:	TO263
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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