STB30NF10

Symbol Micros: TSTB30NF10
Contractor Symbol:
Case : TO263 (D2PAK)
N-MOSFET 35A 100V 115W 0.045Ω STB30NF10T4
Parameters
Open channel resistance: 45mOhm
Max. drain current: 35A
Max. power loss: 115W
Case: D2PAK
Manufacturer: ST
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Manufacturer:: ST Manufacturer part number: STB30NF10T4 Case style: TO263 (D2PAK)  
External warehouse:
2000 pcs.
Quantity of pcs. 1000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,3750
Add to comparison tool
Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ST Manufacturer part number: STB30NF10T4 Case style: TO263 (D2PAK)  
External warehouse:
11000 pcs.
Quantity of pcs. 1000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,3967
Add to comparison tool
Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ST Manufacturer part number: STB30NF10T4 Case style: TO263 (D2PAK)  
External warehouse:
1000 pcs.
Quantity of pcs. 1000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,4125
Add to comparison tool
Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 45mOhm
Max. drain current: 35A
Max. power loss: 115W
Case: D2PAK
Manufacturer: ST
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD